James Daubert

James Daubert is a seasoned engineer with a multifaceted background that spans manufacturing, consulting, and academia, currently serving as a Senior Principal Microelectronic Semiconductor Engineer at Northrop Grumman. In his current role, which he has held since December 2022, James is at the forefront of advancing Gallium Nitride (GaN) technology, specifically focusing on the innovative Super-Lattice Castellated Field Effect Transistor (SLCFET). This cutting-edge technology is pivotal for enhancing the performance and efficiency of semiconductor devices, making significant strides in applications ranging from power electronics to RF communications.

Prior to his current position, James honed his expertise in process engineering from June 2021 to November 2022, where he played a critical role in supporting Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), and Rapid Thermal Annealing (RTA) processes. His work involved the development and manufacturing of various semiconductor materials, including silicon, Silicon Carbide (SiC), Gallium Arsenide (GaAs), and GaN technologies. This extensive experience has equipped him with a robust skill set in process integration, environmental engineering, and compliance, enabling him to navigate the complexities of semiconductor manufacturing while ensuring adherence to environmental standards.

James's commitment to research and characterization, coupled with his strong data analysis capabilities, allows him to contribute significantly to the maturation of GaN technology at Northrop Grumman. His work not only enhances the company's technological portfolio but also positions Northrop Grumman as a leader in semiconductor innovation, addressing the increasing demand for high-performance electronic solutions in various industries. With a blend of technical acumen and a passion for advancing semiconductor technologies, James Daubert continues to make impactful contributions to the field.